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BLP5LA55SZ 数据表(PDF) 3 Page - Ampleon Netherlands B.V.

部件名 BLP5LA55SZ
功能描述  Power LDMOS transistor
PDF  20 Pages
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制造商  AMPLEON [Ampleon Netherlands B.V.]
网页  https://www.ampleon.com
标志 AMPLEON - Ampleon Netherlands B.V.

BLP5LA55SZ 数据表(HTML) 3 Page - Ampleon Netherlands B.V.

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BLP5LA55S
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2021. All rights reserved.
Product data sheet
Rev. 3 — 16 July 2021
3 of 20
BLP5LA55S
Power LDMOS transistor
6.
Characteristics
7.
Test information
7.1 Ruggedness in class-AB operation
The BLP5LA55S is capable of withstanding a load mismatch corresponding to
VSWR = 65 : 1 through all phases under the following conditions: VDS =13.6V;
IDq =100 mA; PL =55W (CW); f = 520MHz.
Table 6.
DC characteristics
Tj = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; ID =2.25mA
30
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 225 mA
1.5
1.9
2.5
V
IDSS
drain leakage current
VGS =0V; VDS =32 V
-
-
1.4
A
IDSX
drain cut-off current
VGS =VGS(th) + 3.75 V;
VDS = 10 V
-38
-
A
IGSS
gate leakage current
VGS =11V; VDS = 0 V
-
-
140
nA
gfs
forward transconductance
VDS =10V; ID = 11.25 A
-
15
-
S
RDS(on)
drain-source on-state resistance
VGS =VGS(th) + 3.75 V;
ID =7.88 A
-60
-
m
Table 7.
AC characteristics
Tj =25 C; unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ
Max Unit
Ciss
input capacitance
VGS = 0 V; VDS = 13.6 V; f = 1 MHz
-
173.5 -
pF
Coss
output capacitance
VGS = 0 V; VDS = 13.6 V; f = 1 MHz
-
106.1 -
pF
Crss
reverse transfer
capacitance
VGS = 0 V; VDS =13.6V; f=1MHz
-
1.3
-
pF
Table 8.
RF characteristics
Test signal: CW at VDS =32V; IDq =100 mA; Tcase = 25 C; unless otherwise specified; in a
class-AB production board measured at frequencies of 520 MHz.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL = 55 W
18.0
19.6
-
dB
RLin
input return loss
PL =55 W
-
15.3
-
dB
D
drain efficiency
PL = 55 W
72.0
75.0
-
%



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