NVMJS1D2N04CL datasheet(2/7 Pages) ONSEMI

2 / 7 page

NVMJS1D2N04CL

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 40 V

TJ = 25°C

TJ = 125°C

250

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = 20 V

100

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 170 mA

1.2

2.0

Threshold Temperature Coefficient

VGS(TH)/TJ

−5.9

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 4.5 V

ID = 50 A

1.5

1.8

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V

ID = 50 A

1.0

1.2

Forward Transconductance

gFS

VDS = 10 V, ID = 50 A

190

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz, VDS = 25 V

5600

Output Capacitance

COSS

2600

Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 32 V; ID = 50 A

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 32 V; ID = 50 A

Threshold Gate Charge

QG(TH)

VGS = 10 V, VDS = 32 V; ID = 50 A

9.4

Gate−to−Source Charge

QGS

17.2

Gate−to−Drain Charge

QGD

13.6

Plateau Voltage

VGP

3.1

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

td(ON)

VGS = 10 V, VDS = 32 V,

ID = 50 A, RG = 2.5 W

Rise Time

Turn−Off Delay Time

td(OFF)

122

Fall Time

116

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 50 A

TJ = 25°C

0.76

1.2

TJ = 125°C

0.66

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 50 A

Charge Time

Discharge Time

Reverse Recovery Charge

QRR

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

NVMJS1D2N04CL 数据表(PDF) 2 Page - ON Semiconductor

NVMJS1D2N04CL 数据表(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7

数据表下载