NT1660/NT1662/NT1663

/NT1664 Series

© Neotec Semiconductor Ltd.,

4/10

NT166xA DS V1.04

www.neotec.com.tw

The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec.



NT1664A

0.1uF

0.1uF

0.1uF

0.1uF

0.1uF

1K

Ω

1K

Ω

1K

Ω

1K

Ω

1K

Ω

0.1uF

BAT10

BAT9

BAT8

BAT7

BAT6

P+

0.1uF

0.1uF

0.1uF

0.1uF

0.1uF

1K

Ω

1K

Ω

1K

Ω

1K

Ω

1K

Ω

0.1uF

BAT5

BAT4

BAT3

BAT2

BAT1

7.5M

Ω

2.4M

Ω

P-

46

1

2

3

4

5

6

10

13

14

15

16

17

18

8

0.1uF

0.1uF

0.1uF

0.1uF

0.1uF

1K

Ω

1K

Ω

1K

Ω

1K

Ω

1K

Ω

0.1uF

BAT15

BAT14

BAT13

BAT12

BAT11

22

25

26

27

28

29

30

0.1uF

0.1uF

0.1uF

0.1uF

0.1uF

1K

Ω

1K

Ω

1K

Ω

1K

Ω

1K

Ω

0.1uF

BAT20

BAT19

BAT18

BAT17

BAT16

34

37

38

39

40

41

42

31

44

43

7

20

19

32

NT1664A

470K

Ω

10M

Ω

10M

Ω

10M

Ω

G

D

S

Q1

NMOS

0.001uF

VDD1

0.001uF

VDD2

0.001uF

VDD3

0.1uF

VDD1

VDD2

VDD3

D1

VDD2

V10

V9

V8

V7

V6

VSS2

VDD1

V5

V4

V3

V2

V1

VSS1

CO1

VDD3

V15

V14

V13

V12

V11

VSS3

VDD4

V20

V19

V18

V17

V16

VSS4

CTLC4

CTLC3

CO4

CTLC1

CO2

CTLC2

CO3

470

Ω

SD1

470

Ω

SD2

470

Ω

SD3

470

Ω

SD4

These devices have limited build-in ESD protection. The leads must be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.