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NT1663 数据表(PDF) 2 Page - Neotec Semiconductor Ltd. |
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NT1663 数据表(HTML) 2 Page - Neotec Semiconductor Ltd. |
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2 / 10 page ![]() NT1660/NT1662/NT1663 /NT1664 Series © Neotec Semiconductor Ltd., 2/10 NT166xA DS V1.04 www.neotec.com.tw The above information is the exclusive intellectual property of Neotec Semiconductor Ltd. and shall not be disclosed, distributed without permission from Neotec. NT1662A 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 1K Ω 1K Ω 1K Ω 1K Ω 1K Ω 0.1uF BAT10 BAT9 BAT8 BAT7 BAT6 P+ 0.1uF 0.1uF 0.1uF 0.1uF 0.1uF 1K Ω 1K Ω 1K Ω 1K Ω 1K Ω 0.1uF BAT5 BAT4 BAT3 BAT2 BAT1 7.5M Ω 2.4M Ω P- 17 18 19 20 1 2 3 7 8 9 10 11 12 13 5 4 15 14 10M Ω G D S Q1 NMOS NT1662A 470K Ω 0.001uF VDD1 0.1uF VDD1 D1 VDD2 V10 V9 V8 V7 V6 VSS2 CTLC2 VDD1 V5 V4 V3 V2 V1 VSS1 CO1 CTLC1 CO2 470 Ω SD2 470 Ω SD1 These devices have limited build-in ESD protection. The leads must be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. |
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