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2016 数据表(PDF) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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2016 数据表(HTML) 1 Page - Shenzhen Tuofeng Semiconductor Technology Co |
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1 / 5 page ![]() Symbol VDS VGS IDM TJ, TSTG Symbol Typ Max 70 90 100 125 RθJL 63 80 W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W ± 12 Gate-Source Voltage Drain-Source Voltage 20 Continuous Drain Current A Maximum Units Parameter TA=25°C Absolute Maximum Ratings TA=25°C unless otherwise noted V V 15 Pulsed Drain Current B Power Dissipation A TA=25°C Junction and Storage Temperature Range A PD °C 1.25 -55 to 150 ID 4.2 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS 2016 V(BR)DSS RDS(on)MAX ID 20V 0.030Ω@ 4.5V 4.2 A 0.040Ω@ 2.5V N-Channel 20-V(D-S) MOSFET General FEATURE APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter SOT-23 MARKING Equivalent Circuit 1.GATE 2.SOURCE 3.DRAIN *w:week code w 1 2 3 ● TrenchFET Power MOSFET ● Lead free product is acquired ● Surface mount package AE9TF www.sztuofeng.com Feb,2018 V1.0 1 2016 |
类似零件编号 - 2016 |
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类似说明 - 2016 |
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