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2016 数据表(PDF) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

部件名 2016
功能描述  N-Channel 20-V(D-S) MOSFET
PDF  5 Pages
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制造商  TUOFENG [Shenzhen Tuofeng Semiconductor Technology Co]
网页  http://www.sztuofeng.com/?lang=en
标志 TUOFENG - Shenzhen Tuofeng Semiconductor Technology Co

2016 数据表(HTML) 2 Page - Shenzhen Tuofeng Semiconductor Technology Co

  2016 Datasheet HTML 1Page - Shenzhen Tuofeng Semiconductor Technology Co 2016 Datasheet HTML 2Page - Shenzhen Tuofeng Semiconductor Technology Co 2016 Datasheet HTML 3Page - Shenzhen Tuofeng Semiconductor Technology Co 2016 Datasheet HTML 4Page - Shenzhen Tuofeng Semiconductor Technology Co 2016 Datasheet HTML 5Page - Shenzhen Tuofeng Semiconductor Technology Co  
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background image
Symbol
Min
Typ
Max
Units
BVDSS
20
V
1
IGSS
100
nA
VGS(th)
0.4
0.6
1
V
ID(ON)
15
A
m
Ω
gFS
8
S
VSD
0.76
1
.2
V
IS
2A
Ciss
436
pF
Coss
66
pF
Crss
44
pF
Rg
3
Ω
Qg
6.2
nC
Qgs
1.6
nC
Qgd
0.5
nC
tD(on)
5.5
ns
tr
6.3
ns
tD(off)
40
ns
tf
12.7
ns
trr
12.3
ns
Qrr
3.5
nC
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=4.5V, VDS=5V
VGS=4.5V, ID=4.2A
Reverse Transfer Capacitance
IF=4A, dI/dt=100A/µs
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
µA
Gate Threshold Voltage
VDS=VGS ID=250µA
VDS=16V, VGS=0V
VDS=0V, VGS=±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
Ω
VGS=2.5V, ID=3.7A
IS=1A,VGS=0V
VDS=5V, ID=4.2A
Turn-On Rise Time
Turn-Off DelayTime
VGS=5V, VDS=10V, RL=2.7Ω,
RGEN=6Ω
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=10V, ID=4.2A
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=10V, f=1MHz
Gate Drain Charge
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev4 : June 2005
30
40
25
30
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate MOSFETS
www.sztuofeng.com
Feb,2018 V1.0
2
2016



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