FEP30XP-E3 datasheet(2/5 Pages) VISHAY

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FEP30xP-E3

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Vishay General Semiconductor

Revision: 27-May-2020

Document Number: 88597

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Note

(1) Thermal resistance from junction to case per diode mounted on heatsink

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST

CONDITIONS

SYMBOL

FEP

30AP

FEP

30BP

FEP

30CP

FEP

30DP

FEP

30FP

FEP

30GP

FEP

30HP

FEP

30JP

UNIT

Maximum instantaneous

forward voltage per diode

15.0 A

0.95

1.3

1.5

Maximum DC reverse current at

rated DC blocking voltage



per diode

TC = 25 °C

μA

TC = 100 °C

500

Maximum reverse recovery time

per diode

IF = 0.5 A,

IR = 1.0 A,

Irr = 0.25 A

trr

Typical junction capacitance



per diode

4.0 V, 1 MHz

175

145

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

FEP

30AP

FEP

30BP

FEP

30CP

FEP

30DP

FEP

30FP

FEP

30GP

FEP

30HP

FEP

30JP

UNIT

Typical thermal resistance per diode

RJC (1)

1.0

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-247AD

FEP30JP-E3/45

6.15

30/tube

Tube

FEP30XP-E3 数据表(PDF) 2 Page - Vishay Siliconix

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FEP30XP-E3 数据表(PDF) 2 Page - Vishay Siliconix

FEP30XP-E3 数据表(HTML) 2 Page - Vishay Siliconix

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