FEP30xP-E3

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Vishay General Semiconductor

Revision: 27-May-2020

3

Document Number: 88597

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Per Diode

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

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0

50

100

150

0

6

12

24

30

36

Case Temperature (°C)

Resistive or Inductive Load

1

10

100

0

50

100

150

200

250

300

Number of Cycles at 60 Hz

T

8.3 ms Single Half Sine-Wave

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1.0

Instantaneous Forward Voltage (V)

1.8

1.6

1.4

1.2

Pulse Width = 300 μs

1 % Duty Cycle

T

T

50 V to 200 V

300 V to 400 V

500 V to 600 V

Percent of Rated Peak Reverse Voltage (%)

0.01

0.1

1

10

100

1000

10

20

30

40

50

60

70

80

90

100

T

T

T

50 V to 200 V

300 V to 600 V

0.1

1

10

100

10

100

1000

Reverse Voltage (V)

T

f = 1.0 MHz

V

50 V to 400 V

500 V to 600 V