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SWCS049D 数据表(PDF) 21 Page - Texas Instruments

部件名 SWCS049D
功能描述  TPS65911 Integrated Power Management Unit Top Specification
PDF  144 Pages
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制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

SWCS049D 数据表(HTML) 21 Page - Texas Instruments

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TPS65911
www.ti.com
SWCS049S – JUNE 2010 – REVISED AUGUST 2018
Submit Documentation Feedback
Product Folder Links: TPS65911
Specifications
Copyright © 2010–2018, Texas Instruments Incorporated
Electrical Characteristics: VIO SMPS (continued)
Over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Ground current (IQ)
Off
1
µA
PWM mode, IOUT = 0 mA, VIN = 3.8 V, VIO_PSKIP = 0
7500
PFM (pulse skipping) mode, no switching, 3-MHz clock
on
250
Low-power (pulse skipping) mode,
no switching ST[1:0] = 11
63
Conversion efficiency
PWM mode, DCRL < 50
mΩ,
VOUT = 1.8 V, VIN = 3.6 V:
IOUT = 10 mA
40%
IOUT = 100 mA
83%
IOUT = 400 mA
85%
IOUT = 800 mA
80%
IOUT = 1200 mA
75%
PFM mode, DCRL < 50
mΩ,
VOUT = 1.8 V, VIN = 3.6 V
IOUT = 1 mA
68%
IOUT = 10 mA
80%
IOUT = 400 mA
85%
5.14 Electrical Characteristics: VDD1 SMPS
Over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Input voltage on VCC1
and VCC7 (VIN)
VOUT ≤ 2.7 V
2.7
5.5
V
VOUT > 2.7 V
VOUT
5.5
DC output voltage
(VOUT)
VGAIN_SEL = 00,
IOUT = 0 to IOUTmax
Max programmable voltage,
SEL[6:0] = 1001011
1.5
V
SEL[6:0] = 0110011
–3%
1.2
3%
Min programmable voltage,
SEL[6:0] = 0000011
0.6
SEL[6:0] = 000000: power
down
0
VGAIN_SEL = 10, SEL = 0101011 = 43, IOUT = 0 to
IOUTmax
–3%
2.2
3%
VGAIN_SEL = 11, SEL = 0101011 = 43, IOUT = 0 to
IOUTmax
–3%
3.3
3%
DC output maximum
voltage maximum value
3.3
V
DC output voltage
programmable step
(VOUTSTEP)
VGAIN_SEL = 00, 72 steps
12.5
mV
Rated output current
(IOUTmax)
VDD1 output voltage = (0.6 to 2.2 V)
1500
mA
VDD1 output voltage = 3.2 V
1200
VDD1 output voltage = (1.2 V, 1.35 V, 1.5 V)
VINmin = 3 V
2000
P-channel MOSFET
On-resistance
(RDS(ON)_PMOS)
VIN = VINmin
300
mΩ
VIN = 3.8 V
250
400
P-channel leakage
current
(ILK_PMOS)
VIN = VINmax, SW1 = 0 V
2
µA
N-channel MOSFET
On-resistance
(RDS(ON)_NMOS)
VIN = VMIN
300
mΩ
VIN = 3.8 V
250
400
N-channel leakage
current
(ILK_NMOS)
VIN = VINmax, SW1 = VINmax
2
µA



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