SIE882DF datasheet(2/10 Pages) VISHAY

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SiE882DF

www.vishay.com

Vishay Siliconix

S09-1221-Rev. A, 29-Jun-09

Document Number: 65002

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Surface mounted on 1" x 1" FR4 board

b. Maximum under steady state conditions is 68 °C/W

c. Measured at source pin (on the side of the package)

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient a, b

 10 s

RthJA

°C/W

Maximum junction-to-case (drain top)

Steady state

RthJC (drain)

0.8

Maximum junction-to-case (source) a, c

RthJC (source)

2.2

2.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

VDS temperature coefficient

V

DS/TJ

ID = 250 μA

-25

mV/°C

VGS(th) temperature coefficient

V

GS(th)/TJ

--6

Gate-source threshold voltage

VGS(th)

VDS = VGS , ID = 250 μA

1.7

2.2

Gate-source leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero gate voltage drain current

IDSS

VDS = 25 V, VGS = 0 V

μA

VDS = 25 V, VGS = 0 V, TJ = 55 °C

On-state drain current a

ID(on)

VDS  5 V, VGS = 10 V

Drain-source on-state resistance a

RDS(on)

VGS = 10 V, ID = 20 A

0.0011

0.0014



VGS = 4.5 V, ID = 20 A

0.0015

0.0018

Forward transconductance a

gfs

VDS = 15 V, ID = 20 A

125

Dynamic b

Input capacitance

Ciss

VDS = 12.5 V, VGS = 0 V, f = 1 MHz

6400

Output capacitance

Coss

1400

Reverse transfer capacitance

Crss

550

Total gate charge

VDS = 12.5 V, VGS = 10 V, ID = 20 A

-96

145

VDS = 12.5 V, VGS = 4.5 V, ID = 20 A

-46

Gate-source charge

Qgs

-18

Gate-drain charge

Qgd

-12

Gate resistance

f = 1 MHz

0.2

1.1

2.2



Turn-on delay time

td(on)

VDD = 12.5 V, RL = 1.25 ,

ID  10 A, VGEN = 4.5 V, Rg = 1 

-45

Rise time

170

255

Turn-off delay time

td(off)

-65

100

Fall time

-85

130

Turn-on delay time

td(on)

VDD = 12.5 V, RL = 1.25 ,

ID  10 A, VGEN = 10 V, Rg = 1 

-20

Rise time

-15

Turn-off delay time

td(off)

-45

Fall time

-10

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

TC = 25 °C

Pulse diode forward current a

ISM

100

Body diode voltage

VSD

IS = 10 A

0.8

1.2

Body diode reverse recovery time

trr

IF = 10 A, di/dt = 100 A/μs,

TJ = 25 °C

-55

Body diode reverse recovery charge

Qrr

105

Reverse recovery fall time

-25

Reverse recovery rise time

-30

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