SIE882DF datasheet(3/10 Pages) VISHAY

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SiE882DF

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Vishay Siliconix

S09-1221-Rev. A, 29-Jun-09

Document Number: 65002

For technical questions, contact: pmostechsupport@vishay.com

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS =10Vthru 4V

VGS =2V

VGS =3V

VDS - Drain-to-Source Voltage (V)

0.0000

0.0004

0.0008

0.0012

0.0016

0.0020

20406080

100

VGS =4.5 V

VGS =10V

ID - Drain Current (A)

20406080

100

VDS =20V

VDS =6V

ID =20A

VDS =12.5V

Qg - Total Gate Charge (nC)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

TC = 25 °C

TC = 125 °C

TC =- 55 °C

VGS - Gate-to-Source Voltage (V)

2000

4000

6000

8000

Ciss

Crss

Coss

ID - Drain Current (A)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

100

125

150

ID =20A

VGS =10V

VGS =4.5 V

TJ - Junction Temperature (°C)

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