Features

•

600 V system-in-package integrating half-bridge gate driver and high-voltage

GaN power transistors:

–

QFN 9 x 9 x 1 mm package

–

–

•

Reverse current capability

•

Zero reverse recovery loss

•

UVLO protection on low-side and high-side

•

Internal bootstrap diode

•

Interlocking function

•

Dedicated pin for shutdown functionality

•

Accurate internal timing match

•

3.3 V to 15 V compatible inputs with hysteresis and pull-down

•

Overtemperature protection

•

Bill of material reduction

•

Very compact and simplified layout

•

Flexible, easy and fast design.

Application

•

Switch-mode power supplies

•

Chargers and adapters

•

High-voltage PFC, DC-DC and DC-AC converters

Description

The MASTERGAN4 is an advanced power system-in-package integrating a gate

driver and two enhancement mode GaN power transistors.

The integrated GaN power transistors have 650 V drain

‑source blocking voltage and

RDS(ON) of 225 mΩ, while the high-side of the embedded gate driver can be easily

supplied by the integrated bootstrap diode

The MASTERGAN4 features UVLO protection on both the lower and upper

driving sections, preventing the power switches from operating in low efficiency

or dangerous conditions, and the interlocking function avoids cross-conduction

conditions.

The input pins extended range allows easy interfacing with microcontrollers, DSP

units or Hall effect sensors.

The MASTERGAN4 operates in the industrial temperature range, -40°C to 125°C.

The device is available in a compact 9x9 mm QFN package.

Product status link

MASTERGAN4

Product label

High power density 600V half-bridge driver with two enhancement mode GaN

Power HEMT

MASTERGAN4

Data brief

DB4419 - Rev 1 - February 2021

For further information contact your local STMicroelectronics sales office.

www.st.com