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RA4M2 数据表(PDF) 64 Page - Renesas Technology Corp

部件名 RA4M2
功能描述  Leading-performance 100 MHz Arm Cortex-M33 core, up to 512 KB code flash memory with background operation, 8 KB Data flash memory, and 128 KB SRAM with Parity/ECC.
PDF  92 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

RA4M2 数据表(HTML) 64 Page - Renesas Technology Corp

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Table 2.36
A/D conversion characteristics for unit 0 (2 of 2)
Conditions: PCLKC = 1 to 50 MHz
Parameter
Min
Typ Max Unit Test conditions
High-precision normal-speed
channels
(AN003 to AN008, AN011 to
AN013)
Conversion time*1
(Operation at PCLKC =
50 MHz)
Permissible signal
source impedance
Max. = 1 kΩ
0.92 (0.66)*2 —
μs
Sampling in 33
states
Offset error
±1.0 ±2.5 LSB —
Full-scale error
±1.0 ±2.5 LSB —
Absolute accuracy
±2.0 ±4.5 LSB —
DNL differential nonlinearity error
±0.5 ±1.5 LSB —
INL integral nonlinearity error
±1.0 ±2.5 LSB —
Normal-precision normal-speed
channels (AN016)
Conversion time*1
(Operation at PCLKC =
50 MHz)
Permissible signal
source impedance
Max. = 1 kΩ
0.92 (0.66)*2 —
μs
Sampling in 33
states
Offset error
±1.0 ±5.5 LSB —
Full-scale error
±1.0 ±5.5 LSB —
Absolute accuracy
±2.0 ±7.5 LSB —
DNL differential nonlinearity error
±0.5 ±4.5 LSB —
INL integral nonlinearity error
±1.0 ±5.5 LSB —
Note:
These specification values apply when there is no access to the external memory during A/D conversion. If access occurs during
A/D conversion, values might not fall within the indicated ranges.
The use of PORT0 as digital outputs is not allowed when the 12-Bit A/D converter is used.
The characteristics apply when AVCC0, AVSS0, VREFH0, VREFL0, and 12-bit A/D converter input voltage are stable.
Note 1. The conversion time includes the sampling and comparison times. The number of sampling states is indicated for the test
conditions.
Note 2. Values in parentheses indicate the sampling time.
Table 2.37
A/D internal reference voltage characteristics
Parameter
Min
Typ
Max
Unit
Test conditions
A/D internal reference voltage
1.13
1.18
1.23
V
Sampling time
4.15
µs
RA4M2 Datasheet
2. Electrical Characteristics
R01DS0367EJ0110 Rev.1.10
Jan 27, 2021
Page 64 of 92



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