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RA4M2 数据表(PDF) 28 Page - Renesas Technology Corp

部件名 RA4M2
功能描述  Leading-performance 100 MHz Arm Cortex-M33 core, up to 512 KB code flash memory with background operation, 8 KB Data flash memory, and 128 KB SRAM with Parity/ECC.
PDF  92 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

RA4M2 数据表(HTML) 28 Page - Renesas Technology Corp

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Under development Preliminary document
 
Specifications in this document are tentative and subject to change
 
RA4M3 Series
59. Electrical Characteristics 
xx xx, 2019 
RA4M2 Starget Spec 
Page  10  of 2123 
Figure 47.4 Temperature dependency in Deep Software Standby mode, power not supplied to SRAM or
USB resume detecting unit, power-on reset circuit low power function disabled (reference data)
Figure 47.5 Temperature dependency in Deep Software Standby mode, power not supplied to SRAM or
USB resume detecting unit, power-on reset circuit low power function enabled (reference data)
1
10
100
-40
-20
0
204060
80
100
Ta (℃)
Average value of the tested middle samples during product evaluation.
Average value of the tested upper-limit samples during product evaluation.
1
10
100
-40
-20
0
204060
80
100
Ta (℃)
Average value of the tested middle samples during product evaluation.
Average value of the tested upper-limit samples during product evaluation.
Figure 2.5
Temperature dependency in Deep Software Standby mode, power not supplied to SRAM or
USB resume detecting unit, power-on reset circuit low power function enabled (reference data)
2.2.6
VCC Rise and Fall Gradient and Ripple Frequency
Table 2.9
Rise and fall gradient characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Test
conditions
VCC rising gradient
Voltage monitor 0 reset disabled at startup
SrVCC
0.0084 —
20
ms/V
Voltage monitor 0 reset enabled at startup
0.0084 —
SCI/USB boot mode*1
0.0084 —
20
VCC falling gradient*2
SfVCC
0.0084 —
ms/V
Note 1. At boot mode, the reset from voltage monitor 0 is disabled regardless of the value of the OFS1.LVDAS bit.
Note 2. This applies when VBATT is used.
Table 2.10
Rising and falling gradient and ripple frequency characteristics
The ripple voltage must meet the allowable ripple frequency fr(VCC) within the range between the VCC upper limit (3.6 V) and lower limit (2.7
V). When the VCC change exceeds VCC ±10%, the allowable voltage change rising and falling gradient dt/dVCC must be met.
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Allowable ripple
frequency
fr (VCC)
10
kHz
Figure 2.6
Vr (VCC) ≤ VCC × 0.2
1
MHz
Figure 2.6
Vr (VCC) ≤ VCC × 0.08
10
MHz
Figure 2.6
Vr (VCC) ≤ VCC × 0.06
Allowable voltage
change rising and
falling gradient
dt/dVCC
1.0
ms/V
When VCC change
exceeds VCC ±10%
RA4M2 Datasheet
2. Electrical Characteristics
R01DS0367EJ0110 Rev.1.10
Jan 27, 2021
Page 28 of 92



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