2

Radiation

The technology of the STMicroelectronics Rad-Hard rectifier’s diodes is intrinsically highly resistant to radiative

environments.

The product radiation hardness assurance is supported by a total ionisation dose (TID) test at high dose rate and

a single effect event (SEE) characterization.

2.1

Total dose radiation (TID) testing

The part has been characterized in total ionizing dose at high dose rate on 12 parts packaged in SMD.5, 4 parts

unbiased, 4 parts reverse biased and 4 parts forward biased. All parts were from the same wafer lot.

The irradiation has been done according to the ESCC 22900 specification, standard window.

Both pre-irradiation and post-irradiation performances have been tested using the same circuitry and test

The following parameters were measured :

•

Before irradiation

•

After irradiation at final dose 3 Mrad (Si)

•

After 168 hrs at room temperature

•

after 168 hrs at 100 °C anneal

Based on this characterization, the device is deemed able to sustain 3 Mrad(Si) while maintaining all its

parameters within its specifications.

2.2

Single event effect

The Single Event Effect (SEE) relevant to power rectifiers are characterized, i.e. the Single Event Burnout (SEB).

The tests are performed as per ESCC 25100, each one on 3 pieces from 1 wafer at room temperature.

The accept/reject criteria are :

•

SEB (Destructive mode):

The diode is reverse biased during irradiation. The test is stopped as soon as a SEB occurs or when the

reverse leakage current is above the specification or when the overall fluency on the component reaches

1E7 cm².

•

Post irradiation stress test (PIST):

After the irradiation, a stress is applied to the diode in order to reveal any latent damage on the irradiated

devices.

Type

Conditions

Result

Total ionisation dose

High dose rate 4 reverse biased + 4 forward biased + 4 unbiased

Immune up to 3 Mrad(Si)

Single effect burnout

LET : 61.2 MeV.cm/mg

No burnout

STPS80A150CHR

Radiation

DS13383 - Rev 3

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