STPS80A150CSG datasheet(2/11 Pages) STMICROELECTRONICS

2 / 11 page

Characteristics

1.1

Absolute maximum ratings

The absolute maximum ratings are limiting values at 25°C, per diode unless otherwise notified. Values provided in

Table 1 shall not be exceeded at any time during use or storage

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VRWM(1)

Working peak reverse voltage

150

VRRM

Repetitive peak reverse voltage

150

IO(2)

Average output rectified current

per diode

per package

IFSM

Forward surge current

190

dV/dt(3)

Reverse voltage maximum rise rate (4)

kV/μs

Top

Operating temperature range (case temperature)

-65 to +175

°C

Tj(5)

Maximum junction temperature

+175

°C

Tstg

Storage temperature range

-65 to +175

°C

Tsol(6)

Soldering temperature

+245

°C

ESD

Electrostatic discharge - Human body model

1. See Figure 1.

2. Per diode: at Tcase > +33.5 °C, derate linearly to 0 A at +175 °C. Per package: at Tcase > -8 °C, derate linearly to 0 at

+175°C.

3. Evaluated by characterization. Tested in production at 25 °C on 5 parts per wafer lot.

4. VRRM from stationary no-conduction state to VRRM < VRRM max

5. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

6. Duration 5 seconds maximum with at least 3 minutes between consecutive temperature peaks.

Figure 1. VRRM and VWRM definition - Schematics

Repetitive peak

reverse voltage VRRM

Working peak

reverse voltage VRWM

STPS80A150CHR

Characteristics

DS13383 - Rev 3

page 2/11

STPS80A150CSG 数据表(PDF) 2 Page - STMicroelectronics

STPS80A150CSG 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11

数据表下载