STPSC10065D datasheet(1/13 Pages) STMICROELECTRONICS

部件名	STPSC10065D

功能描述	650 V, 10 A low VF power Schottky silicon carbide diode

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 13 page

K

A

TO-220AC

K

A

K

D²PAK HV

K

NC

A

Features

•

No or negligible reverse recovery

•

Switching behavior independent of temperature

•

Dedicated to PFC applications

•

High forward surge capability

•

Operating Tj from -40 °C to 175 °C

•

D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

•

ECOPACK2 compliant component

Applications

•

DC/DC converter

•

High frequency inverter

•

Snubber

•

Boost PFC function

Description

This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is

manufactured using a silicon carbide substrate. The wide band gap material allows

the design of a Schottky diode structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and ringing patterns are negligible. The

minimal capacitive turn-off behavior is independent of temperature.

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in

charging station, DC/DC, easing the compliance to IEC-60664-1.

Product label

Product status link

STPSC10065

Product summary

Symbol

Value

IF(AV)

10 A

VRRM

650 V

Tj (max.)

175 °C

VF (typ.)

1.30 V

650 V, 10 A low VF power Schottky silicon carbide diode

STPSC10065

Datasheet

DS12185 - Rev 3 - March 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

类似零件编号 - STPSC10065D

制造商	部件名	数据表	功能描述
STMicroelectronics	STPSC10065DLF	379Kb / 12P	650 V, 10 A power Schottky silicon carbide diode 31-Mar-2021
STMicroelectronics	STPSC10065DY	542Kb / 12P	Automotive 650 V power Schottky silicon carbide diode 09-Nov-2017

More results

类似说明 - STPSC10065D

制造商	部件名	数据表	功能描述
ON Semiconductor	FFSP1065A	301Kb / 6P	Silicon Carbide Schottky Diode 650 V, 10 A January, 2020 ??Rev. 2
STMicroelectronics	STPSC10H065DLF	387Kb / 12P	650 V, 10 A power Schottky silicon carbide diode March 2021
ON Semiconductor	FFSM1065A	467Kb / 6P	Silicon Carbide Schottky Diode 650 V, 10 A December, 2019 ??Rev. 3
	FFSP1065B-F085	279Kb / 6P	Silicon Carbide Schottky Diode 650 V, 10 A September, 2019 ??Rev. 3
	FFSP1065B	278Kb / 6P	Silicon Carbide Schottky Diode 650 V, 10 A September, 2019 ??Rev. 0
STMicroelectronics	STPSC10065DLF	379Kb / 12P	650 V, 10 A power Schottky silicon carbide diode 31-Mar-2021
STMicroelectronics	STPSC20065C	227Kb / 10P	650 V, dual 10 A, power Schottky silicon carbide diode April 2019 Rev 1
ON Semiconductor	FFSB1065B-F085	331Kb / 7P	Silicon Carbide Schottky Diode 650 V, 10 A March, 2022 - Rev. 3
	FFSD1065B-F085	396Kb / 7P	Silicon Carbide Schottky Diode 650 V, 10 A March, 2022 - Rev. 5
	FFSB1065A	299Kb / 6P	Silicon Carbide Schottky Diode 650 V, 10 A November, 2021 - Rev. 6