STPSC10065D datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

1.1

Characteristics (curves)

Figure 1. Forward voltage drop versus forward current

(typical values)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

VF (V)

IF(A)

Figure 2. Reverse leakage current versus reverse voltage

applied (typical values)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

100 150 200 250 300 350 400 450 500 550 600 650

Tj=25 °C

Tj=150 °C

Tj=175 °C

VR(V)

IR(µA)

Figure 3. Peak forward current versus case temperature

100

125

150

175

δ=tp/T

δ = 1

δ = 0.5

δ = 0.1

δ = 0.3

δ = 0.7

IM(A)

TC(°C)

Figure 4. Junction capacitance versus reverse voltage

applied (typical values)

100

200

300

400

500

600

700

0.1

1.0

10.0

100.0

1000.0

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

VR(V)

Cj(pF)

Figure 5. Relative variation of thermal impedance junction

to case versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

th(j-c) / Rth(j-c)

p(s)

Single pulse

Figure 6. Non-repetitive peak surge forward current

versus pulse duration (sinusoidal waveform)

1.E+01

1.E+02

1.E+03

1.E-05

1.E-04

1.E-03

1.E-02

Ta=25 °C

Ta=125 °C

tp(s)

IFSM(A)

STPSC10065

Characteristics (curves)

DS12185 - Rev 3

page 4/13

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