STPSC8065 datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

STPSC8065

2/9

DocID030730 Rev 2

Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

650

IF(RMS)

Forward rms current

IF(AV)

Average forward current

TC = 150 °C(1), DC current

IFRM

Repetitive peak forward

current

Tc = 150 °C, Tj

= 175 °C, δ = 0.1

IFSM

Surge non repetitive forward

current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs square, Tc = 25 °C

200

Tstg

Storage temperature range

-65 to +175

°C

Operating junction temperature(2)

-40 to +175

°C

Notes:

(1)Value based on Rth(j-c) max.

(2)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Value

Unit

Typ.

Max.

Rth(j-c)

Junction to case

1.1

1.65

°C/W

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

105

µA

Tj = 150 °C

750

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 8 A

1.30

1.45

Tj = 150 °C

1.45

1.65

Tj = 175 °C

1.50

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 500 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.95 x IF(AV) + 0.087 x IF2(RMS)

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