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STPSC8065 数据表(PDF) 4 Page - STMicroelectronics |
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STPSC8065 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Characteristics STPSC8065 4/9 DocID030730 Rev 2 1.1 Characteristics (curves) Figure 1: Forward voltage drop versus forward current (typical values) Figure 2: Reverse leakage current versus reverse voltage applied (typical values) Figure 3: Peak forward current versus case temperature Figure 4: Junction capacitance versus reverse voltage applied (typical values) Figure 5: Relative variation of thermal impedance junction to case versus pulse duration Figure 6: Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 0 2 4 6 8 10 12 14 16 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 T a=150 °C T a=175 °C T a=25 °C Pulse test : t p=500µs T a=100 °C VF(V) IF(A) 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 0 50 100 150 200 250 300 350 400 450 500 550 600 650 T j=25 °C T j=150 °C T j=175 °C VR(V) IR(µA) 0 20 40 60 80 0 25 50 75 100 125 150 175 T δ=tp/T tp δ = 1 δ = 0.5 δ = 0.1 δ = 0.3 δ = 0.7 IM(A) TC(°C) 0 100 200 300 400 500 600 0.1 1.0 10.0 100.0 1000.0 F=1 MHz V OSC=30 mVRMS T j=25 °C VR(V) Cj(pF) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Single pulse tp(s) Zth(j-c) /Rth(j-c) 1.E+01 1.E+02 1.E+03 1.E-05 1.E-04 1.E-03 1.E-02 T a=25 °C T a=125 °C tp(s) IFSM(A) |
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