STRH12P10 datasheet(2/15 Pages) STMICROELECTRONICS

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Electrical ratings

TC= 25 °C unless otherwise specified

Table 1. Absolute maximum ratings (pre-irradiation)

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

100

VGS

Gate-source voltage

±18

ID(1)

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

7.5

IDM(2)

Drain current (pulsed)

PTOT

Total power dissipation at Tcase = 25 °C

dv/dt(3)

Peak diode recovery voltage slope

2.4

V/ns

Tstg

Storage temperature range

-55 to 150

°C

Max. operating junction temperature range

150

°C

1. Rated according to the Rthj-case + Rthc-s

2. Pulse width limited by safe operating area.

3. ISD ≤ 12 A, di/dt ≤ 36 A/μs, VDD = 80 %V(BR)DSS.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max.

1.47

°C/W

Rthc-s

Thermal resistance case-sink typ.

0.20

°C/W

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS(1)

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V) at 110 °C

112

EAR

Repetitive pulse avalanche energy

(VDS = 50 V, IAR = 6 A, f = 10 KHz,

TJ = 25 °C, duty cycle = 50%)

Repetitive pulse avalanche energy

(VDS = 50 V, IAR = 6 A, f = 10 KHz,

TJ = 110 °C, duty cycle = 50%)

5.5

1. Maximum rating value.

STRH12P10

Electrical ratings

DS8699 - Rev 9

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