STRH12P10 datasheet(3/15 Pages) STMICROELECTRONICS

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Electrical characteristics

For the P-channel MOSFET polarity of voltages and current has to be reversed.

Table 4. Electrical characteristics (Tamb = 25 °C unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Max.

Unit

IDSS

Zero gate voltage drain current

80% V(BR)DSS

µA

IGSS

Gate body leakage current

VGS = 16 V

100

VGS = -16 V

-100

VGS = 16 V, TC = 125 °C

200

VGS = -16 V, TC = 125 °C

-200

V(BR)DSS(1) Drain-to-source breakdown voltage VGS = 0 V, ID = 1 mA

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 1 mA

2.0

4.5

VDS = VGS, ID = 1 mA, TC = 125 °C

1.6

3.8

VDS = VGS, ID = 1 mA, TC = -55 °C

2.2

5.2

RDS(on)

Static drain-source on resistance

VGS = 12 V, ID = 12 A

0.30

Ω

Ciss(2)

Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

940

1410

Coss (2)

Output capacitance

135

205

Crss (2)

Reverse transfer capacitance

Total gate charge

VDD = 50 V, ID = 12 A, VGS = 12 V

Qgs

Gate-to-source charge

3.5

6.5

Qgd

Gate-to-drain (“Miller”) charge

td(on)

Turn-on delay time

VDD = 50 V, ID = 6 A, RG = 4.7 Ω, VGS = 12 V

Rise time

td(off)

Turn-off delay time

Fall time

3.5

10.5

VSD

Forward on voltage

ISD = 12 A, VGS = 0 V

1.5

ISD = 12 A, VGS = 0 V, TC = 125 °C

1.25

trr

Reverse recovery time

ISD = 6 A, di/dt = 50 A/µs, VDD = 50 V

178

310

trr

Reverse recovery time

ISD = 6 A, di/dt = 50 A/µs, VDD = 50 V, TJ = 150 °C

225

400

1. This rating is guaranteed at TJ ≤ 25 °C (see Figure 9. Normalized V(BR)DSS vs temperature).

2. Not tested, guaranteed by process.

STRH12P10

Electrical characteristics

DS8699 - Rev 9

page 3/15

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