STTH60200CHR datasheet(3/12 Pages) STMICROELECTRONICS

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1.3

Electrical characteristics

Limiting value per diodes, unless otherwise specified.

Table 3. Static electrical characteristics

Symbol

Parameter

MIL-STD-750 test

method

Test conditions(1)

Min. Typ. Max. Unit

Reverse leakage current

4016

DC method, VR = 200 V

Tj = 25 °C

0.02

µA

Tj = 125 °C

105

300

VF (2)

Forward voltage drop

4011

IF = 5 A

Tj = -55 °C

0.88 1.04

Tj = 25 °C

0.74 0.87

Tj = 125 °C

0.57 0.66

IF = 10 A

Tj = -55 °C

0.92 1.07

Tj = 25 °C

0.81 0.92

Tj = 125 °C

0.65 0.75

IF = 20 A

Tj = -55 °C

0.98 1.15

Tj = 25 °C

0.88 1.02

Tj = 125 °C

0.74 0.87

IF = 30 A

Tj = -55 °C

1.03 1.20

Tj = 25 °C

0.95 1.09

Tj = 125 °C

0.82 0.95

IF = 40 A

Tj = -55 °C

1.08 1.25

Tj = 25 °C

1.00 1.15

Tj = 125 °C

0.88 1.02

1. Test performed with both anode terminals 1 and 2 tied together

2. Pulse width 680 µs, duty cycle ≤ 2%

Table 4. Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

C(1)

Junction capacitance

Tj = 25 °C

VR = 10 V, F = 1 MHz

225

trr(2)

Reverse recovery time

Tj = 25 °C

IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V

IRM

Reverse recovery current

Tj = 125 °C IF = 30 A, dIF/dt = -200 A/µs, VR = 160 V

10.5

QRR

Reverse recovery charges

335

Sfactor

Softness factor

0.25

1. By default, guaranteed by sampling. Guaranteed by a 100% test in case the sampling acceptance criteria is not met.

2. Guaranteed by design and characterization. Not tested in production

STTH60200CHR

Electrical characteristics

DS12587 - Rev 2

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