2

Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. Static (per side)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, IDS = 100 μA

65

V

IDSS

Zero-gate voltage drain current

VGS = 0 V, VDS = 28 V

1

μA

VGS = 0 V, VDS = 50 V

IGSS

Gate-body leakage current

VGS=-6/10 V, VDS=0 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = 28 V, IDS = 600 μA

1.5

2.5

V

VGS(Q)

Gate quiescent voltage

VDS= 28 V, IDS = 100 mA

1.5

4

VDS(on)

Static drain-source on-voltage

VGS = 10 V, IDS = 3 A

0.5

RDS(on)

Drain-source on-state resistance

VGS= 10 V, VDS=100 mV

1

Ω

IDS(on)

Static drain-source on-current

2.5

A

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

f

Frequency

1.3

1.6

GHz

POUT

Output power

f = 1450 MHz at 1dB compression

point in Doherty amplifier test

circuit, pulsed CW

180

W

GPS

Power gain

14

dB

ƞD

Drain efficiency

60

%

Note:

VDD = 28 V, IDQMain = 600 mA, VGpeak = 0.9 V, pulse width = 10 µs, duty cycle = 12%.

RF2L16180CB4

Electrical characteristics

DS13287 - Rev 2

page 3/12