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RF2L16180CB4 数据表(PDF) 4 Page - STMicroelectronics |
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RF2L16180CB4 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 12 page ![]() 3 Typical performance Table 6. Output power, power gain and drain efficiency vs input power (f = 1450 MHz) PIN (dBm) POUT (dBm) POUT (W) IDS (A) GPS (dB) ηD(%) 24.6 39.8 9.5 1.3 15.2 25.7 25.6 40.8 12.1 1.5 15.2 29.2 26.6 41.9 15.4 1.7 15.3 33.0 27.6 43.0 19.9 1.9 15.4 36.9 28.6 44.1 25.6 2.2 15.5 40.8 29.6 45.2 33.0 2.7 15.6 44.2 30.6 46.3 42.6 3.2 15.7 47.3 31.6 47.3 53.9 3.9 15.7 49.9 32.6 48.3 67.2 4.6 15.7 51.9 33.5 49.2 82.3 5.5 15.6 53.6 34.5 49.9 96.6 6.2 15.3 55.3 35.5 50.7 116.5 7.3 15.2 57.0 36.5 51.3 135.6 8.3 14.8 58.2 37.4 51.9 154.8 9.2 14.5 60.2 38.4 52.4 172.9 10.1 14.0 61.4 39.3 52.8 188.9 10.8 13.4 62.5 40.2 53.0 200.6 11.4 12.9 63.1 41.1 53.3 213.1 12.0 12.2 63.7 Figure 1. Power Gain and drain efficiency vs output power at 1450 MHz (on Doherty test fixture) Power gain Efficiency 20 30 40 50 60 70 11 12 13 14 15 16 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 POUT (dbm) GADG110620201522MT Note: VDD = 28 V, IDQMain = 600 mA, pulsed CW, pulse width = 10 μs, duty cycle = 12% RF2L16180CB4 Typical performance DS13287 - Rev 2 page 4/12 |
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