B2

1

2

3

Pin connection

Pin

Connection

1

Gate

2

Source (bottom side)

3

Drain

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

RF2L16180CF2

1470 MHz

28 V

180 W

17.5 dB

56%

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Internal input matching for ease of use

•

Large positive and negative gate-source voltage range for improved class C

operation

•

Excellent thermal stability, low HCI drift

•

In compliance with the european directive 2002/95/EC

Applications

•

Base stations

•

L-band radars

•

Industrial, scientific and medical (ISM)

Description

The RF2L16180CF2 is a 180 W internally matched LDMOS transistor designed

for multicarrier WCDMA/PCS/DCS/LTE base stations and ISM applications in the

frequency range from 1.3 to 1.7 GHz. It can be used in class AB, B or C for all typical

modulation formats.

Product status link

RF2L16180CF2

Product summary

Order code

RF2L16180CF2

Marking

2L16180

Package

B2

Packing

Tape and reel 13"

Base/Bulk quantity

120/120

180 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor

RF2L16180CF2

Datasheet

DS13308 - Rev 2 - April 2021

For further information contact your local STMicroelectronics sales office.

www.st.com