2

Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 100 µA

65

V

IDSS

Zero-gate voltage drain leakage

current

VGS = 0 V, VDS = 28 V

1

μA

VGS = 0 V, VDS = 50 V

IGSS

Gate-body leakage current

VGS = -6/10 V, VDS = 0 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = 28 V, ID = 600 μA

1.75

2.50

V

VGS(Q)

Gate quiescent voltage

VDS = 1V, ID = 800 mA

2

4

V

VDS(on)

Static drain-source on-voltage

VGS = 10 V, ID = 5 A

0.5

V

IDS(on)

Static drain-source on-current

VGS = 10 V, VDS = 100 mV

2.5

A

RDS(on)

Static drain-source on-resistance

VGS = 10 V, VDS = 100 mV

1

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

f

Frequency

1300

1700

MHz

POUT

Output power

f = 1470 MHz, at 1dB compression point

180

W

GPS

Power gain

17.5

dB

ηD

Drain efficiency

56

%

VSWR

Load mismatch

POUT = 180 W, all phases

10:1

Note:

VDD = 28 V, IDQ = 800 mA , Pulsed CW, pulse width = 10 µs, duty cycle = 12%.

RF2L16180CF2

Electrical characteristics

DS13308 - Rev 2

page 3/13