D4E

3

1

2

5

4

Pin connection

Pin

Connection

1

Drain A

2

Drain B

3

Source (bottom side)

4

Gate B

5

Gate A

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

RF2L24280CB4

2450 MHz

28 V

280 W

13 dB

60%

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Internally matched pair transistors in push-pull configuration

•

Large positive and negative gate-source voltage range for improved class C

operation

•

Excellent thermal stability, low HCI drift

•

In compliance with the European directive 2002/95/EC

Applications

•

Industrial, scientific and medical

Description

The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designed for

multiple use especially RF energy applications including cooking, heating and

medical in the frequency range from 2.4 to 2.5 GHz. It is qualified up to 32 V

operation.

Product status link

RF2L24280CB4

Product summary

Order code

RF2L24280CB4

Marking

2L24280

Package

D4E

Packing

Tray

Base/bulk quantity

20/100

280 W, 28 V, 2.4 to 2.5 GHz RF power LDMOS transistor

RF2L24280CB4

Datasheet

DS13569 - Rev 3 - September 2021

For further information contact your local STMicroelectronics sales office.

www.st.com