2

Electrical characteristics

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, IDS = 100 µA

65

-

V

IDSS

Zero gate voltage drain leakage

current

VGS = 0 V, VDS = 28 V

-

1

μA

VGS = 0 V, VDS = 50 V

-

IGSS

Gate-source leakage current

VGS = -6/10 V, VDS = 0 V

-

±100

nA

VGS(th)

Gate threshold voltage

VDS = 28 V, IDS = 600 µA

1.5

-

2.5

V

VGS(Q)

Gate quiescent voltage

VDS = 2 V, IDS = 20 mA

0.8

-

2.7

V

VDS(on)

Static drain-source on-voltage

VGS = 10 V, IDS = 1 A

60

-

120

mV

IDS(on)

Static drain-source on-current

VGS = 10 V, VDS = 100 mV

0.5

-

1.5

A

RDS(on)

Drain-source on-state resistance

VGS = 10 V, IDS = 1 A

-

1

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

POUT

Output power

f = 2450 MHz, pulsed CW,

2.5 dB compression

-

280

W

GPS

Power gain

-

13

dB

ηD

Drain efficiency

-

60

%

VSWR

Load mismatch

POUT = 280 W, all phases

-

10:1

Note:

VDD = 28 V, IDQ = 10 mA, pulse width = 10 μs, duty cycle = 10%.

RF2L24280CB4

Electrical characteristics

DS13569 - Rev 3

page 3/11