B4E

1

2

3

5

4

Pin connection

Pin

Connection

1

Drain A

2

Drain B

3

Source (bottom side)

4

Gate B

5

Gate A

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

ST05250

945 MHz

28 V

250 W

13.5 dB

52 %

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Large positive and negative gate-source voltage range for improved class C

operation

•

In compliance with the european directive 2002/95/EC

Applications

•

2 – 30 MHz HF or short wave communication

•

30 – 88 MHz ground communication

•

118 – 140 MHz avionics

•

136 – 174 MHz commercial ground communication

•

30 – 512 MHz jammer, ground/air communication

•

HF – 1 GHz ISM - instrumentation

Description

The ST05250 is a 250 W, 28/32 V LDMOS FETs, designed for wideband

communication and ISM applications in the frequency range from HF to 1 GHz. It

can be used in class AB, B or C for all typical modulation formats.

Product status link

ST05250

Product summary

Order code

ST05250

Marking

ST05250

Package

B4E

Packing

Tape and reel 13"

Base / Bulk qty

120 / 120

250 W, 28/32 V, HF to 1 GHz, RF Power LDMOS transistor

ST05250

Datasheet

DS12681 - Rev 4 - March 2021

For further information contact your local STMicroelectronics sales office.

www.st.com