2

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 4. Static (per side)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

90

V

IDSS

Zero-gate voltage drain current

VGS = 0 V, VDS = 28 V

1

nA

VGS = 0 V, VDS = 75 V

IGSS

Gate-body leakage current

VGS = -8/+10 V, VDS = 0 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = 28 V, ID = 650 µA

1

3

V

VDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 0.7 A

0.21

V

Ciss

Common source input capacitance

VGS= 0 V, VDD = 28 V, f = 1 MHz

123

pF

Coss

Common source output capacitance

2.5

Crss

Common source feedback capacitance

40

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

POUT

Output power

f = 945 MHz, 3dB compression

-

250

W

GPS

Power gain

-

13.5

dB

ƞD

Drain efficiency

-

52

%

VSWR

Load mismatch

At POUT = 250 W all phases

-

10:1

Note:

VDD = 28 V, IDQ = 500 mA, pulsed CW, pulse width = 20 μs, duty cycle = 10%.

ST05250

Electrical characteristics

DS12681 - Rev 4

page 3/17