B2

1

2

3

Pin connection

Pin

Connection

1

Gate

2

Source (bottom side)

3

Drain

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

ST24180

2350 MHz

32 V

180 W

15.3 dB

48%

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Internal input matching for ease of use

•

Large positive and negative gate/source voltage range for improved class C

operation

•

In compliance with the European Directive 2002/95/EC

Applications

•

RF energy

•

Industrial, scientific and medical (ISM)

Description

The ST24180 is a 180 W, internally-matched LDMOS FET designed for multiple

uses, especially for RF energy applications such as cooking, heating and medical

with frequencies from 2400 to 2500 MHz. It is qualified for operations requiring up to

32 V.

Product status link

ST24180

Product summary

Order code

ST24180

Marking

ST24180

Package

B2

Packing

Tape and Reel 13"

Base / Bulk

120 / 120

180 W, 32 V, 2.3 to 2.5 GHz RF power LDMOS transistor

ST24180

Datasheet

DS12777 - Rev 2 - October 2020

For further information contact your local STMicroelectronics sales office.

www.st.com