ST24180 datasheet(3/11 Pages) STMICROELECTRONICS

部件名	ST24180

功能描述	180 W, 32 V, 2.3 to 2.5 GHz RF power LDMOS transistor

PDF	11 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

3 / 11 page

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 100 µA

IDSS

Zero-gate voltage drain current

VGS = 0 V, VDS = 28 V

μA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = 10 V

μA

VGS(th)

Gate threshold voltage

VDS = 28 V, ID = 600 μA

1.5

2.5

VDS(on)

Static drain-source on-voltage

VGS = 10 V, ID = 1.55 A

0.22

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

POUT

Output power

VDD = 32 V, IDQ = 0.8 A,

f = 2350 MHz,

PW = 10 μs, DC = 10% (see

Figure 1. Power gain and drain

efficiency vs output power (at 2350

MHz) and Figure 3. Test circuit (f =

2350 MHz))

180

Gain

Power gain

15.3

Efficiency

Drain efficiency

VSWR

Load mismatch

POUT = 180 W, all phases

10:1

ST24180

Electrical characteristics

DS12777 - Rev 2

page 3/11

ST24180 数据表(PDF) 3 Page - STMicroelectronics

ST24180 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11

数据表下载