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A1P50S65M2 数据表(PDF) 4 Page - STMicroelectronics |
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A1P50S65M2 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 14 page ![]() Symbol Parameter Test conditions Min. Typ. Max. Unit RTHj-c Thermal resistance junction-to-case Each diode - 1.0 1.1 °C/W RTHc-h Thermal resistance case- to-heatsink Each diode, λgrease = 1 W/(m·°C) - 0.9 °C/W 1.3 NTC Table 5. NTC temperature sensor, considered as stand-alone Symbol Parameter Test conditions Min. Typ. Max. Unit R25 Resistance T = 25°C 5 kΩ R100 Resistance T = 100°C 493 Ω ΔR/R Deviation of R100 -5 +5 % B25/50 B-constant 3375 K B25/80 B-constant 3411 K T Operating temperature range -40 150 °C Figure 1. NTC resistance vs temperature GADG260720171142NTC 10 4 10 3 10 2 0 25 50 75 100 125 R (Ω) TC (°C) Figure 2. NTC resistance vs temperature, zoom GADG260720171151NTCZ 800 700 600 500 400 300 85 90 95 100 105 110 R (Ω) TC (°C) max min typ 1.4 Package Table 6. ACEPACK™ 1 package Symbol Parameter Min. Typ. Max. Unit Visol Isolation voltage (AC voltage, t = 60 s) 2500 Vrms Tstg Storage temperature -40 125 °C CTI Comparative tracking index 200 Ls Stray inductance module P1 - EW loop 28.7 nH Rs Module single lead resistance, terminal-to-chip 3.9 mΩ A1P50S65M2 NTC DS12332 - Rev 3 page 4/14 |
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