40P03. datasheet(4/8 Pages) VBSEMI

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

100

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

TJ = 25 °C

1.1

1.3

1.5

1.7

1.9

2.1

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.01

0.02

0.03

0.04

0.05

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID =7A

0.001

0.01

0.1

100

Time (s)

Safe Operating Area

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

100

0.1

100

0.01

0.1

TA =25 °C

Single Pulse

100 ms

10 s

Limited byRDS(on)*

BVDSS

Limited

10 ms

1ms

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