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40P03. 数据表(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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40P03. 数据表(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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1 / 8 page ![]() P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition •TrenchFET ® Power MOSFET • 100 % Rg Tested APPLICATIONS • Load Switch • Battery Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) d Qg (Typ.) - 30 0.0 18 at VGS = - 10 V - 40 13 nC 0.0 22 at VGS = - 4.5 V - 35 Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 95 °C/W. d. Based on TC = 25 °C. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 40 A TC = 70 °C - 35 TA = 25 °C - 30.0 a, b TA = 70 °C - 28 a, b Pulsed Drain Current IDM - 150 Continuous Source-Drain Diode Current TC = 25 °C IS - 3.5 TA = 25 °C - 2.1a, b Maximum Power Dissipation TC = 25 °C PD 40 W TC = 70 °C 32 TA = 25 °C 2.5a, b TA = 70 °C 1.6a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 40 50 °C/W Maximum Junction-to-Foot Steady State RthJF 24 30 TO-251 S D G Top View S G D P-Channel MOSFET www.VBsemi.com m m m m m m m 服务热线:400-655-8788 40P03. 1 |
类似零件编号 - 40P03. |
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类似说明 - 40P03. |
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