Characteristics

STPS20LCD200C

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DocID024741 Rev 4

1

Characteristics

Table 2: Absolute ratings (limiting values per diode at Tamb = 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

200

V

IF(RMS)

Forward rms current

DPAK

/TO-220AB

20

A

IF(AV)

Average forward current δ = 0.5,

square wave (DPAK, TO-220AB)

Tc = 145 °C

Per diode

10

A

Tc = 140 °C

Per device

20

IFSM

Surge non repetitive forward current

tp = 10 ms

sinusoidal

DPAK

125

A

TO-220AB

150

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature (1)

175

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal resistance parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

3

°C/W

Total

1.8

Rth(c)

Coupling

0.6

When the two diodes 1 and 2 are used simultaneously:

ΔTj(diode1) = P(diode1) x Rth(j-c)(per diode) + P(diode2) x Rth(c)

Table 4: Static electrical characteristics, per diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

5

µA

Tj = 125 °C

-

0.7

2.5

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 10 A

-

0.95

V

Tj = 125 °C

-

0.76

0.81

Tj = 25 °C

IF = 20 A

-

1.125

Tj = 125 °C

-

0.89

0.97

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.65 x IF(AV) + 0.016 x IF2(RMS)