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STPS20LCD200C 数据表(PDF) 3 Page - STMicroelectronics |
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STPS20LCD200C 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() STPS20LCD200C Characteristics DocID024741 Rev 4 3/10 1.1 Characteristics (curves) Figure 1: Average forward power dissipation versus average forward current (per diode) Figure 2: Relative variation of thermal impedance junction to case versus pulse duration Figure 3: Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 4: Junction capacitance versus reverse voltage applied (typical values, per diode) Figure 5: Forward voltage drop versus forward current (per diode) Figure 6: Thermal resistance junction to ambient versus copper surface under tab for DPAK (typical values) 0 2 4 6 8 10 12 0 2 4 6 8 10 12 PF(AV)(W) = 0.05 T = tp/T tp = 0.2 = 0.5 = 1 = 0.1 IF(AV)(A) δ δ δ δ δ δ 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Z th (j -c)/Rth (j -c) Single pulse DPAK / TO-220AB t (s) P 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 0 20 40 60 80 100 120 140 160 180 200 IR(mA) T j=150°C T j=125°C T j=25°C T j=100°C T j=50°C T j=75°C VR(V) 10 100 1000 1 10 100 1000 C(pF) F = 1 MHz V OSC = 30 mVRMS T j = 25 °C VR(V) 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 SCu(cm²) Rth(j-a) (°C/W) DPAK Epoxy printed board FR4, eCu= 35 µm 90 100 |
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