Characteristics

STPS5H100AF

2/8

DocID029499 Rev 1

1

Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(AV)

Average forward current

TL

= 115 °C, δ = 0.5, square pulse

5

A

IFSM

Surge non repetitive forward

current

tp = 10 ms sinusoidal

125

A

tp = 8.3 ms sinusoidal

130

PARM

Repetitive peak avalanche

power

tp = 10 µs, Tj = 125 °C

165

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(1)

175

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-l)

Junction to lead

16

°C/W

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = 100 V

-

0.7

3.5

µA

Tj = 125 °C

-

1

4

mA

Tj = 150 °C

-

16

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 2.5 A

-

0.67

V

Tj = 125 °C

-

0.51

0.55

Tj = 25 °C

IF = 5 A

-

0.76

Tj = 125 °C

-

0.57

0.61

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.49 x IF(AV) + 0.024 x IF2(RMS)

For more information, please refer to the following application notes related to the power

losses.



AN604 (Calculation of conduction losses in a power rectifier)



AN4021 (Calculation of reverse losses in a power diode)