STPS5H100AF datasheet(3/8 Pages) STMICROELECTRONICS

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STPS5H100AF

Characteristics

DocID029499 Rev 1

3/8

1.1

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current

Figure 2: Average forward current versus ambient

temperature (δ = 0.5)

Figure 3: Normalized avalanche power derating

versus pulse duration

Figure 4: Relative variation of thermal impedance

junction to lead versus pulse duration

Figure 5: Reverse leakage current versus reverse

voltage applied (typical values)

Figure 6: Junction capacitance versus reverse

voltage applied (typical values)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

δ = tp/T

PF(AV)(W)

IF(AV)(A)

100

125

150

175

th(j-a) = Rth(j-l)

δ = tp/T

IF(AV)(A)

Tamb(°C)

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Single pulse

Zth(j-l)/Rth(j-l)

tp(s)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

100

j = 125 °C

j = 25 °C

j = 100 °C

j = 50 °C

j = 75 °C

j = 150 °C

VR(V)

IR(µA)

100

1000

100

F = 1 MHz

OSC = 30 mVRMS

j = 25 °C

VR(V)

C(pF)

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