STPSC20065C datasheet(1/10 Pages) STMICROELECTRONICS

部件名	STPSC20065C

功能描述	650 V, dual 10 A, power Schottky silicon carbide diode

PDF	10 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 10 page

K

A1

A2

TO-247 LL

K

A2

A1

Product label

Features

•

No or negligible reverse recovery

•

Switching behavior independent of temperature

•

Low Forward voltage drop

•

Operating Tj from -40 °C to +175 °C

•

ECOPACK2 compliant component

•

Power efficient product

Applications

•

Air conditioning equipment

•

PFC

•

OBC (On board battery chargers)

•

Server Power supplies

•

Telecom power

Description

The STPSC20065C is an ultra-high performance power Schottky diode. It is

manufactured using a silicon carbide substrate. The wide band gap material allows

the design of a Schottky diode structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and ringing patterns are negligible. The

minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost

performance in hard switching conditions. Its high forward surge capability ensures

good robustness during transient phases.

Product status

STPSC20065C

Product summary

Symbol

Value

IF(AV)

2 X 10 A

VRRM

650 V

Tj(max.)

175 °C

VF(typ.)

1.30 V

650 V, dual 10 A, power Schottky silicon carbide diode

STPSC20065C

Datasheet

DS12994 - Rev 1 - April 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

类似零件编号 - STPSC20065C

制造商	部件名	数据表	功能描述
STMicroelectronics	STPSC20065	631Kb / 13P	650 V power Schottky silicon carbide diode July 2017 Rev 2
	STPSC20065-Y	519Kb / 11P	Automotive 650 V power Schottky silicon carbide diode May 2016 Rev 1
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	STPSC20065-Y	617Kb / 14P	Automotive 650 V power Schottky silicon carbide diode 09-Nov-2017
	STPSC20065D	631Kb / 13P	650 V power Schottky silicon carbide diode July 2017 Rev 2

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