1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, per diode, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

650

V

IF(RMS)

Forward rms current

22

A

IF(AV)

Average forward current

Per diode

Tc = 150 °C(1), DC current

10

A

Per device

Tc = 150 °C(1), DC current

20

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs square, Tc = 25 °C

48

39

210

A

IFRM

Repetitive peak forward current

Tc = 150 °C , Tj = 175 °C, δ = 0.1

42

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Operating junction temperature range

-40 to +175

°C

1. Value based on Rth(j-c) max.

Table 2. Thermal resistance parameters

Symbol

Parameter

Typ. value

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

1.0

1.5

°C/W

Per device

0.5

0.75

For more information, please refer to the following application notes related to the power losses :

•

AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = 650 V

-

7

130

µA

Tj = 150 °C

-

53

900

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 10 A

-

1.30

1.45

V

Tj = 150 °C

-

1.45

1.65

Tj = 25 °C

IF = 20 A

-

1.88

Tj = 150 °C

-

2.00

2.33

1. tp = 5 ms, δ < 2%

2. tp = 500 μs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.97 x IF(AV) + 0.068 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPSC20065C

Characteristics

DS12994 - Rev 1

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