Features

•

Less than 1 mm height package

•

High creepage package

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No or negligible reverse recovery

•

Temperature independent switching behavior

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High forward surge capability

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Low drop forward voltage

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Power efficient product

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ECOPACK2 compliant component

Applications

•

Switch mode power supply

•

Boost PFC

•

Bootstrap diode

•

LLC clamping function

•

High frequency inverter applications

Description

This 4 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is

manufactured using a silicon carbide substrate. The wide band gap material allows

the design of a Schottky diode structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and ringing patterns are negligible. The

minimal capacitive turn-off behavior is independent of temperature.

Qualified in low profile package, the STPSC4H065DLF in PowerFLAT 8x8 HV,

enables low drop forward voltage associated to high surge capabilities in low space

environment such as telecom and network, industrial or renewable energy domains.

Product status link

STPSC4H065DLF

Product summary

Symbol

Value

IF(AV)

4 A

VRRM

650 V

VF(typ.)

1.38 V

T j(max.)

175 °C

Product label

650 V power Schottky silicon carbide diode

STPSC4H065DLF

Datasheet

DS12819 - Rev 2 - March 2021

For further information contact your local STMicroelectronics sales office.

www.st.com