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STPSC4H065DLF 数据表(PDF) 2 Page - STMicroelectronics

部件名 STPSC4H065DLF
功能描述  650 V power Schottky silicon carbide diode
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPSC4H065DLF 数据表(HTML) 2 Page - STMicroelectronics

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1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
Tj = -40 °C to + 175 °C
650
V
IF(RMS)
Forward rms current
11
A
IF(AV)
Average forward current
Tc = 140 °C(1), DC
4
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
38
35
400
A
IFRM
Repetitive peak forward current
Tc = 140 °C(1) , Tj = 175 °C, δ = 0.1
17
A
Tstg
Storage temperature range
-55 to +175
°C
Tj
Operating junction temperature range
-40 to +175
°C
1. Value based on Rth(j-c) max.
Table 2. Thermal resistance parameters
Symbol
Parameter
Typ. value
Max. value
Unit
Rth(j-c)
Junction to case
2.6
3.9
°C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-
3
40
µA
Tj = 150 °C
-
35
170
VF(2)
Forward voltage drop
Tj = 25 °C
IF = 4 A
-
1.38
1.55
V
Tj = 150 °C
-
1.60
1.95
1. tp = 10 ms, δ < 2%
2. tp = 500 μs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 1.00 x IF(AV) + 0.237 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses:
AN604 : Calculation of conduction losses in a power rectifier
AN4021 : Calculation of reverse losses on a power diode
STPSC4H065DLF
Characteristics
DS12819 - Rev 2
page 2/12



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