Table 7. Electrical characteristics at VCC+ = 2.0 V, Vicm = VOUT = VCC/2, T = 25 °C, RL = 10 kΩ connected to VCC / 2 and

CL = 47 pF (unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

DC Performance

Vio

Input offset voltage

(Vicm = 0 V)

T = 25 °C

±200

µV

-40 °C ≤ T ≤ 125 °C

±700

∆Vio/∆T

Input offset voltage drift

-40 °C ≤ T ≤ 125 °C

±5

µV/°C

Iib

Input bias current

T = 25 °C

1

pA

-40 °C ≤ T ≤ 125 °C

40

Iio

Input offset current

T = 25 °C

1

pA

-40 °C ≤ T ≤ 125 °C

15

AVD

Open loop gain

VCC-+100 mV ≤ VOUT ≤ VCC+ -100 mV, T = 25 °C

95

dB

VCC-+100 mV ≤ VOUT ≤ VCC+ -100 mV,

-40 °C ≤ T ≤ 125 °C

80

RL = 2 kΩ, VCC- + 200 mV ≤ VOUT ≤ VCC+ -200 mV,

T = 25 °C

90

RL = 2 kΩ, VCC- + 200 mV ≤ VOUT ≤ VCC+ -200 mV,

40 °C ≤ T ≤125 °C

80

CMR

Common-mode rejection

ratio

20.log(∆Vio/∆Vicm)

VCC- -0.1 V ≤ Vicm ≤ VCC+, T = 25 °C

73

94

dB

VCC- -0.1 V ≤ Vicm ≤ VCC+, -40 °C ≤ T ≤ 125 °C

67

86

VOH

High level output voltage

drop

(VOH = VCC+ - VOUT)

T = 25 °C

10

mV

-40 °C ≤ T ≤ 125 °C

20

VOL

Low level output voltage

drop

(VOL = VOUT)

T = 25 °C

10

-40 °C ≤ T ≤ 125 °C

20

IOUT

Isink (RL connected to

VCC+)

T = 25 °C

45

60

mA

-40 °C ≤ T ≤ 125 °C

30

Isource (RL connected to

VCC-)

T = 25 °C

45

65

-40 °C ≤ T ≤ 125 °C

30

ICC

Supply current (per

channel, RL > 1 MΩ,

Vicm = 0 V)

T = 25 °C

1.7

1.9

mA

-40 °C ≤ T ≤ 125 °C

1.9

AC performance

GBP

Gain bandwidth product

17

20

MHz

SR

Slew rate

AV = 1 V/V, 10% to 90%(1)

9

11

V/µs

ts

Settling time

RL = 4.7 kΩ, AV = -1 V/V, to 0.1%, Vin = 1 Vp-p

450

ns

RL = 4.7 kΩ, AV = -1 V/V, to 0.01%, Vin = 1 Vp-p(2)

570

trec

Overload recovery time

VOUT 50 mV from initial value, AV = +1

300

ns

Φm

Phase margin

47

degrees

GM

Gain margin

8

dB

Cin

Differential input

capacitance

6.5

pF

TSV771, TSV772

Electrical characteristics

DS13842 - Rev 3

page 9/32