L99H02 datasheet(21/51 Pages) STMICROELECTRONICS

21 / 51 page

DS12547 Rev 6

21/51

L99H02

Electrical specifications

2.5

SPI - electrical characteristics

VS = 6 V to 28 V, VCC = 3 V to 5.3 V, Tj = -40°C to 150°C, unless otherwise specified. The

voltages are referred to GND and currents are assumed positive, when the current flows

into the pin.

DI timing parameters tested in production by a passed/failed test:



Tj = -40°C / +25°C: SPI communication @ 2 MHz.



Tj = +125°C: SPI communication @ 1.25 MHz.

Table 19. DI timing

Item

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

19.1

tCLK

Clock period

—

1000

—

19.2

tCLKH

Clock high time

—

400

—

19.3

tCLKL

Clock low time

—

400

—

19.4

tset CSN

CSN setup time, CSN low

before rising edge of CLK

—

400

—

19.5

tset CLK

CLK setup time, CLK high

before rising edge of CSN

—

400

—

19.6

tset DI

DI setup time

—

200

—

19.7

thold DI

DI hold time

—

200

—

19.8

tr in

Rise time of input signal DI,

CLK, CSN

—

100

19.9

tf in

Fall time of input signal DI,

CLK, CSN

—

100

Table 20. DO

Item Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

20.1

VDOL

Low-level output

voltage

ID =-4 mA

0.2

0.4

20.2

VDOH

High-level output

voltage

ID =4 mA

VCC -0.4 VCC -0.2

20.3

IDOLK

Tristate leakage

current

VCSN =VCC;

0V< VDO <VCC

-10

µA

20.4

CDO(1)

Value of input capacity is not measured in production test. Parameter guaranteed by design.

Tristate input

capacitance

VCSN =VCC;

0V< VCC <5.3 V

L99H02 数据表(PDF) 21 Page - STMicroelectronics

L99H02 数据表(HTML) 21 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51

数据表下载