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TSB7191 数据表(PDF) 6 Page - STMicroelectronics

部件名 TSB7191
功能描述  Precision rail-to-rail input / output 36 V, 22 MHz op-amps
PDF  34 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TSB7191 数据表(HTML) 6 Page - STMicroelectronics

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Astab
Minimum gain for
stability
No sustained oscillations.
Positive gain configuration:
Vcc- < Vicm < Vcc+ + 0.1 V,
-40 °C < T < 125 °C
10
V/V
No sustained oscillations.
Negative gain configuration.
Vcc- < Vicm < Vcc+ + 0.1 V ,
-40 °C < T < 125 °C
-9
SR
Slew rate
9 V step, RL = 10 kΩ,
CL = 100 pF,
AV = 1 V/V, 10% to 90%
8.5
12
V/µs
THD+N
Total harmonic
distorsion + noise
VIN = 0.1 Vrms , RL = 10 kΩ, AV = +1,
f = 1 kHz, BW = 22 kHz
0.0022
%
VIN = 0.1 Vrms , RL = 1 kΩ, AV = +1,
f = 1 kHz, BW = 22 kHz
0.0022
CR
Crosstalk
VOUT = 5 Vpp, f = 1 kHz, AV = +11,
RL = 10 kΩ
125
dB
VOUT = 5Vpp, f = 10 kHz, AV = +11,
RL = 10 kΩ
100
Φm
Phase margin
At gain= +10, 25 °C, 10 kΩ, 100 pF
68
CLOAD
Capacitive load drive
100(5)
pF
en
Input voltage noise
density
f = 10 Hz
20
nV/√Hz
f = 100 Hz
13
f = 10 kHz
12
en p-p
Input noise voltage
0.1 Hz ≤ f ≤ 10 Hz
0.5
µVPP
in
Input current noise
density
f = 1 kHz
0.15(6)
pA/√Hz
1. See Input offset voltage drift over the temperature in application information.
2. Typical value is based on the VIO drift observed after 1000 h at 125 °C extrapolated to 25 °C using the Arrhenius law and
assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration. See Long term
input offset voltage drift.
3. Current is positive when it is sinked into the op-amp.
4. Iio is defined as |Iibp – Iibn|
5. For higher capacitive values see Figure 24. Phase margin vs. output current at VCC = 36 V and Figure 25. Phase margin vs.
capacitive load
6. Theoretical value of the input current noise density based on the measurement of the input transistor base current:
in= 2.q.ib
TSB7191, TSB7191A, TSB7192, TSB7192A
Electrical characteristics
DS12641 - Rev 5
page 6/34



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