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STL3N65M2 数据表(PDF) 1 Page - STMicroelectronics |
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STL3N65M2 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() PowerFLAT 3.3x3.3 HV 1 2 3 4 8 7 6 5 5 6 7 8 NG4D5678S123Z D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code VDS RDS(on ) max. ID STL3N65M2 650 V 1.8 Ω 2.3 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STL3N65M2 Product summary Order code STL3N65M2 Marking 3N65M Package PowerFLAT 3.3x3.3 HV Packing Tape and reel N-channel 650 V, 1.6 Ω typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package STL3N65M2 Datasheet DS11065 - Rev 4 - May 2022 For further information contact your local STMicroelectronics sales office. www.st.com |
类似零件编号 - STL3N65M2 |
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类似说明 - STL3N65M2 |
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