STL3N65M2 datasheet(3/13 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 3. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

650

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 650 V

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 1 A

1.6

1.8

Ω

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

155

Coss

Output capacitance

Crss

Reverse transfer capacitance

0.2

Coss eq.(1)

Equivalent capacitance energy

VDS = 0 to 520 V, VGS = 0 V

Intrinsic gate resistance

f = 1 MHz open drain

8.5

Ω

Total gate charge

VDD = 520 V, ID = 2.3 A

VGS = 0 to 10 V

(see Figure 14. Test circuit for gate

charge behavior)

Qgs

Gate-source charge

Qgd

Gate-drain charge

1.7

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS.

Table 5. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 1.15 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13. Test circuit for

resistive load switching times and

Figure 18. Switching time waveform)

Rise time

3.4

td(off)

Turn-off delay time

Fall time

21.5

STL3N65M2

Electrical characteristics

DS11065 - Rev 4

page 3/13

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