STP35N60M2-EP datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STP35N60M2-EP

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DocID030578 Rev 1

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 600 V

µA

VGS = 0 V, VDS = 600 V,

TC = 125 °C(1)

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 13 A

0.110

0.130

Notes:

(1)Defined by design, not subject to production test

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

1750

Coss

Output capacitance

Crss

Reverse transfer

capacitance

2.5

Coss eq.(1)

Equivalent output

capacitance

VDS = 0 to 480 V, VGS = 0 V

204

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

Total gate charge

VDD = 480 V, ID = 26 A,

VGS = 0 to 10 V

(see Figure 16: "Test circuit

for gate charge behavior")

Qgs

Gate-source charge

Qgd

Gate-drain charge

Notes:

(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Table 7: Switching energy

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

E(off)

Turn-off energy

(from 90% VGS to 0% ID)

VDD = 400 V, ID = 4 A,

RG = 4.7

Ω, VGS = 10 V

µJ

VDD = 400 V, ID = 10 A,

RG = 4.7

Ω, VGS = 10 V

µJ

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